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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD628 DESCRIPTION *Collector-Emitter Sustaining Voltage: VCEO(sus)= 100V(Min.) *High DC Current Gain: hFE= 1000(Min.)@IC= 5A *Low Collector Saturation Voltage: VCE (sat)= 2.0V(Max.)@ IC= 5A *Complement to Type 2SB638 APPLICATIONS *Designed for low frequency power amplifier and high current switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage w ww scs .i VALUE 100 100 7 10 15 2 80 150 -65~+150 UNIT V .cn mi e V V A A A W Collector Current-Continunous Collector Current-Peak Base Current-Continunous Collector Power Dissipation @TC=25 Junction Temperature Storage Temperature Range PC Tj Tstg isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD628 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 200mA; RBE= 100 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 7 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 10mA B 2.0 V V CE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 100mA 3.0 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 5A; IB= 10mA B 2.0 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 10A; IB= 100mA ICBO Collector Cutoff Current ICEO Collector Cutoff Current hFE DC Current Gain Switching Times w w scs .i w VCB= 100V; IE= 0 VCE= 80V; RBE= .cn mi e 1000 2 8 3.5 V 0.1 mA 1.0 A IC= 5A, VCE= 3V 20000 ton Turn-on Time IC= 5A, IB1= -IB2= 10mA s toff Fall Time s isc Websitewww.iscsemi.cn |
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